Yusuke Higashi

According to our database, Yusuke Higashi authored at least 13 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.

Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.

J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability.

Yuta Aiba, Yusuke Higashi, Hitomi Tanaka, Hiroki Tanaka, Fumie Kikushima, Toshio Fujisawa, Hideko Mukaida, Masayuki Miura, Tomoya Sanuki

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V.

Harumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.

Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.

Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli.

Yusuke Higashi, Tetsushi Ikeda, Hiroyuki Takai, Satoshi Iwaki

Proceedings of the 61st IEEE Annual Conference of the Society of Instrument and Control Engineers, 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.

J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation.

Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki

Proceedings of the IEEE International Memory Workshop, 2022

2019

New Insights into the Imprint Effect in FE-HfO2 and its Recovery.

Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Study on mechanism of thermal curing in ultra-thin gate dielectrics.

Yuichiro Mitani, Yusuke Higashi, Yasushi Nakasaki

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation.

Takao Marukame, Kodai Ueyoshi, Tetsuya Asai, Masato Motomura, Alexandre Schmid, Masamichi Suzuki, Yusuke Higashi, Yuichiro Mitani

IEEE Trans. Circuits Syst. II Express Briefs, 2017

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.

Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe

Microelectron. Reliab., 2017