Yury Illarionov

According to our database, Yury Illarionov authored at least 8 papers between 2015 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2022

Finding Suitable Gate Insulators for Reliable 2D FETs.

Theresia Knobloch, Yury Yu. Illarionov, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study.

Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020

Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.

Yury Yu. Illarionov, Alexander G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, Stefan Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, Nikolai S. Sokolov, Tibor Grasser

Proceedings of the 2020 Device Research Conference, 2020

2018

Reliability of next-generation field-effect transistors with transition metal dichalcogenides.

Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Annealing and Encapsulation of CVD-MoS2 FETs with 10¹⁰On/Off Current Ratio.

Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser

Proceedings of the 76th Device Research Conference, 2018

2017

Physical modeling of the hysteresis in M0S2 transistors.

Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max Christian Lemme, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.

Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser

Proceedings of the 45th European Solid State Device Research Conference, 2015