Yuchul Hwang

According to our database, Yuchul Hwang authored at least 6 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence.

Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology.

Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk.

SungMan Rhee, Sung-Pyo Park, Sangku Park, Yuchul Hwang, Sangwoo Pae, Jun Meng, Yoonju Park

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM.

Taiki Uemura, Byungjin Chung, Shin-Young Chung, Seungbae Lee, Yuchul Hwang, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk.

SungMan Rhee, Hyunjin Kim, Sangku Park, Taiki Uemura, Yuchul Hwang, Seungjin Choo, Jinju Kim, Hwasung Rhee, Shin-Young Chung

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2014

Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory.

Kyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang

Proceedings of the 44th European Solid State Device Research Conference, 2014