Yuanjie Lv

Orcid: 0000-0002-9207-8344

According to our database1, Yuanjie Lv authored at least 9 papers between 2014 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs".
IEEE Access, 2024

Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs.
IEEE Access, 2024

2021
Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices.
Proceedings of the 16th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2021

2019
GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
Anxiety Level Detection Using BCI of Miner's Smart Helmet.
Mob. Networks Appl., 2018

2017
Dynamic characteristics and related trapping effects of GaN-based Fin-MISHEMTs.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

Design and realization of a X-band graphene amplifier MMIC.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015
Dependency of current collapse on the device structure of GaN-based HEMTs.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014
Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs.
IEICE Electron. Express, 2014


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