Young-Soo Sohn
According to our database1,
Young-Soo Sohn
authored at least 38 papers
between 1999 and 2024.
Collaborative distances:
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Bibliography
2024
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5<sup>th</sup>-Generation 10nm DRAM Process.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
2021
Proceedings of the IEEE Hot Chips 33 Symposium, 2021
Aquabolt-XL: Samsung HBM2-PIM with in-memory processing for ML accelerators and beyond.
Proceedings of the IEEE Hot Chips 33 Symposium, 2021
2020
IEEE J. Solid State Circuits, 2020
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking.
IEEE J. Solid State Circuits, 2019
A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2018
Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM.
IEEE J. Solid State Circuits, 2018
A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2017
A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution.
IEEE J. Solid State Circuits, 2017
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2016
A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s.
IEEE Trans. Circuits Syst. I Regul. Pap., 2016
A low-EMI four-bit four-wire single-ended DRAM interface by using a three-level balanced coding scheme.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
2014
IEEE Trans. Circuits Syst. II Express Briefs, 2014
2012
An 8GB/s quad-skew-cancelling parallel transceiver in 90nm CMOS for high-speed DRAM interface.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
An on-chip TSV emulation using metal bar surrounded by metal ring to develop interface circuits.
Proceedings of the International SoC Design Conference, 2012
2011
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction.
IEEE J. Solid State Circuits, 2011
A Single-Loop SS-LMS Algorithm With Single-Ended Integrating DFE Receiver for Multi-Drop DRAM Interface.
IEEE J. Solid State Circuits, 2011
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2010
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010
Proceedings of the IEEE Custom Integrated Circuits Conference, 2010
2009
IEEE Trans. Circuits Syst. I Regul. Pap., 2009
2008
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008
2007
Microelectron. J., 2007
2006
Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process.
Microelectron. J., 2006
A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter.
IEEE J. Solid State Circuits, 2006
2005
A VCDL-based 60-760-MHz dual-loop DLL with infinite phase-shift capability and adaptive-bandwidth scheme.
IEEE J. Solid State Circuits, 2005
2003
A 2.2 Gbps CMOS look-ahead DFE receiver for multidrop channel with pin-to-pin time skew compensation.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2003
2002
IEEE J. Solid State Circuits, 2002
1999
IEEE J. Solid State Circuits, 1999