Yoshio Nishi
According to our database1,
Yoshio Nishi
authored at least 5 papers
between 2001 and 2016.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 1988, "For contributions to semiconductor process technology, nonvolatile memory devices, silicon-on-sapphire devices, and VLSI device physics/technology, and for leadership in VLSI memory research and development.".
Timeline
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Bibliography
2016
A CMOS-compatible boosted transistor having >2× drive current and low leakage current.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2014
Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014
2013
First principles modeling of charged oxygen vacancy filaments in reduced TiO<sub>2</sub>-implications to the operation of non-volatile memory devices.
Math. Comput. Model., 2013
On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations.
Proceedings of the European Solid-State Device Research Conference, 2013
2001