Yoshiaki Asao

According to our database, Yoshiaki Asao authored at least 9 papers between 1996 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

A Comprehensive Model for Write Disturbance in Resistive Memory Composed of Cross-Point Array.

Yoshiaki Asao, Fumio Horiguchi

IEICE Trans. Electron., 2017

2016

A Precise Model for Cross-Point Memory Array.

Yoshiaki Asao, Fumio Horiguchi

IEICE Trans. Electron., 2016

2010

A 64Mb MRAM with clamped-reference and adequate-reference schemes.

Kenji Tsuchida, Tsuneo Inaba, Katsuyuki Fujita, Yoshihiro Ueda, Takafumi Shimizu, Yoshiaki Asao, Takeshi Kajiyama, Masayoshi Iwayama, Kuniaki Sugiura, Sumio Ikegawa, Tatsuya Kishi, Tadashi Kai, Minoru Amano, Naoharu Shimomura, Hiroaki Yoda, Yohji Watanabe

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2008

A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory.

Yoshiaki Asao, Masayoshi Iwayama, Kenji Tsuchida, Akihiro Nitayama, Hiroaki Yoda, Hisanori Aikawa, Sumio Ikegawa, Tatsuya Kishi

Proceedings of the 23rd IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2008), 2008

2006

MRAM Write Error Categorization with QCKB.

Yuui Shimizu, Hisanori Aikawa, Keiji Hosotani, Naoharu Shimomura, Tadashi Kai, Yoshihiro Ueda, Yoshiaki Asao, Yoshihisa Iwata, Kenji Tsuchida, Sumio Ikegawa

Proceedings of the 14th IEEE International Workshop on Memory Technology, 2006

A 16Mb MRAM with FORK Wiring Scheme and Burst Modes.

Yoshihisa Iwata, Kenji Tsuchida, Tsuneo Inaba, Yui Shimizu, R. Takizawa, Yoshihiro Ueda, Tadahiko Sugibayashi, Yoshiaki Asao, Takeshi Kajiyama, Keiji Hosotani, Sumio Ikegawa, Tadashi Kai, M. Nakayama, Shuichi Tahara, Hiroaki Yoda

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2002

Memory design using a one-transistor gain cell on SOI.

Takashi Ohsawa, Katsuyuki Fujita, Tomoki Higashi, Yoshihisa Iwata, Takeshi Kajiyama, Yoshiaki Asao, Kazumasa Sunouchi

IEEE J. Solid State Circuits, 2002

1997

Flexible test mode approach for 256-Mb DRAM.

Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik

IEEE J. Solid State Circuits, 1997

1996

Fault-tolerant designs for 256 Mb DRAM.

Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao

IEEE J. Solid State Circuits, 1996