Yoram Betser

According to our database, Yoram Betser authored at least 4 papers between 1999 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

A 4b/Cell 8Gb NROM Data-Storage Memory with Enhanced Write Performance.

Ran Sahar, Avi Lavan, Eran Geyari, Amit Berman, Itzic Cohen, Ori Tirosh, Kobi Danon, Yair Sofer, Yoram Betser, Amichai Givant, Alexander Kushnarenko, Yaal Horesh, Ron Eliyahu, Eduardo Maayan, Boaz Eitan, Wang Pei Jen, Yan Feng, Lin Ching Yao, Kwon Yi Jin, Kwon Sung Woo, Cai En Jing, Yi Jing Jing, Kim Jong Oh, Yi Guan Jiun

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2006

A 4b/cell NROM 1Gb Data-Storage Memory.

Yan Polansky, Avi Lavan, Ran Sahar, Oleg Dadashev, Yoram Betser, Guy Cohen, Eduardo Maayan, Boaz Eitan, Ful-Long Ni, Yen-Hui Joseph Ku, Chih-Yuan Lu, Tim Chang-Ting Chen, Chun-Yu Liao, Chin-Hung Chang, Chung Kuang Chen, Wen-Chiao Ho, Yite Shih, Wenchi Ting, Wenpin Lu

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2001

An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology.

Shrinivasan Jaganathan, Sundararajan Krishnan, Dino Mensa, Thomas Mathew, Yoram Betser, Yun Wei, Dennis W. Scott, Miguel Urteaga, Mark J. W. Rodwell

IEEE J. Solid State Circuits, 2001

1999

Ultra high frequency integrated circuits using transferred substrate heterojunction bipolar transistors.

Mark J. W. Rodwell, Q. Lee, Dino Mensa, J. Guthrie, Yoram Betser, Suzanne C. Martin, R. P. Smith, S. Jaganathan, Thomas Mathew, P. Krishnan, C. Serhan, Stephen I. Long

Proceedings of the 1999 International Symposium on Circuits and Systems, ISCAS 1999, Orlando, Florida, USA, May 30, 1999