Yoonsang Park
According to our database1,
Yoonsang Park
authored at least 2 papers
between 2023 and 2024.
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Bibliography
2024
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing.
Neuromorph. Comput. Eng., June, 2023