Yoonsang Park

According to our database1, Yoonsang Park authored at least 2 papers between 2023 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing.
Neuromorph. Comput. Eng., June, 2023


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