Yongsung Ji

According to our database1, Yongsung Ji authored at least 8 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021
Reliability of STT-MRAM for various embedded applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


Reliability on EUV Interconnect Technology for 7nm and beyond.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


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