Yonggu Kang

According to our database, Yonggu Kang authored at least 4 papers between 2008 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2014

25.3 A 1.35V 5.0Gb/s/pin GDDR5M with 5.4mW standby power and an error-adaptive duty-cycle corrector.

Hyun-Woo Lee, Junyoung Song, Sangah Hyun, Seunggeun Baek, Yuri Lim, Jungwan Lee, Minsu Park, Haerang Choi, Changkyu Choi, Jin-Youp Cha, Jaeil Kim, Hoon Choi, Seung-Wook Kwack, Yonggu Kang, Jongsam Kim, Junghoon Park, Jonghwan Kim, Jin-Hee Cho, Chulwoo Kim, Yunsaing Kim, Jaejin Lee, Byong-Tae Chung, Sung-Joo Hong

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2012

A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture.

Kibong Koo, Sunghwa Ok, Yonggu Kang, Seungbong Kim, Choungki Song, Hyeyoung Lee, Hyungsoo Kim, Yongmi Kim, Jeonghun Lee, Seunghan Oak, Yosep Lee, Jungyu Lee, Joongho Lee, Hyungyu Lee, Jaemin Jang, Jongho Jung, Byeongchan Choi, Yong-Ju Kim, Youngdo Hur, Yunsaing Kim, Byong-Tae Chung, Yongtak Kim

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2009

CMOS cross-coupled charge pump with improved latch-up immunity.

Su-Jin Park, Yonggu Kang, Joung-Yeal Kim, Tae Hee Han, Young-Hyun Jun, Chil-Gee Lee, Bai-Sun Kong

IEICE Electron. Express, 2009

2008

Novel bootstrapped CMOS differential logic family for ultra-low voltage SoCs.

Byung Hwa Jung, Sung-Chan Kang, Jae-Hyuk Oh, Yoon-Suk Park, Yong-Ki Kim, Yonggu Kang, Jong-Woo Kim, Bai-Sun Kong

IEICE Electron. Express, 2008