Yohji Watanabe

According to our database, Yohji Watanabe authored at least 13 papers between 1989 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

A perspective on NVRAM technology for future computing system.

Katsuhiko Hoya, Kosuke Hatsuda, Kenji Tsuchida, Yohji Watanabe, Yusuke Shirota, Tatsunori Kanai

Proceedings of the International Symposium on VLSI Design, Automation and Test, 2019

2011

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

IEEE J. Solid State Circuits, 2011

A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance.

Daisaburo Takashima, Yasushi Nagadomi, Kosuke Hatsuda, Yohji Watanabe, Shuso Fujii

IEEE J. Solid State Circuits, 2011

2010

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

IEEE J. Solid State Circuits, 2010

A 64Mb MRAM with clamped-reference and adequate-reference schemes.

Kenji Tsuchida, Tsuneo Inaba, Katsuyuki Fujita, Yoshihiro Ueda, Takafumi Shimizu, Yoshiaki Asao, Takeshi Kajiyama, Masayoshi Iwayama, Kuniaki Sugiura, Sumio Ikegawa, Tatsuya Kishi, Tadashi Kai, Minoru Amano, Naoharu Shimomura, Hiroaki Yoda, Yohji Watanabe

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

1997

Flexible test mode approach for 256-Mb DRAM.

Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik

IEEE J. Solid State Circuits, 1997

1996

A 286 mm² 256 Mb DRAM with ×32 both-ends DQ.

Yohji Watanabe, Ring Wong, Toshiaki Kirihata, Daisuke Kato, John K. DeBrosse, Takahiko Rara, Munehiro Yoshida, Rideo Mukai, Khandker N. Quader, Takeshi Nagai, Peter Poechmueller, Peter Pfefferl, Matthew R. Wordeman, Shuso Fujii

IEEE J. Solid State Circuits, 1996

Fault-tolerant designs for 256 Mb DRAM.

Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao

IEEE J. Solid State Circuits, 1996

1994

Offset compensating bit-line sensing scheme for high density DRAM's.

Yohji Watanabe, Nobuo Nakamura, Shigeyoshi Watanabe

IEEE J. Solid State Circuits, January, 1994

1989

A new CR-delay circuit technology for high-density and high-speed DRAMs.

Yohji Watanabe, Takashi Ohsawa, Kiyofumi Sakurai, Tohru Furuyama

IEEE J. Solid State Circuits, August, 1989

An experimental 2-bit/cell storage DRAM for macrocell or memory-on-logic application.

Tohru Furuyama, Takashi Ohsawa, Yousei Nagahama, Hiroto Tanaka, Yohji Watanabe, Tohru Kimura, Kazuyoshi Muraoka, Kenji Natori

IEEE J. Solid State Circuits, April, 1989