Yinghui Zhong

Orcid: 0000-0001-9983-6729

Affiliations:
  • Zhengzhou University, School of Physics and Engineering, China


According to our database1, Yinghui Zhong authored at least 5 papers between 2017 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Radiation effects modeling of InP-based HEMT based on neural networks.
Microelectron. J., 2024

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT.
Microelectron. J., 2024

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level.
Microelectron. J., 2024

2019
一种基于梯度提升回归树的系外行星宜居性预测方法 (Habitability Prediction of Exoplanets Based on GBRT Algorithm).
计算机科学, 2019

2017
Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs.
Frontiers Inf. Technol. Electron. Eng., 2017


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