Yiming Qu

According to our database, Yiming Qu authored at least 15 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs.

Chu Yan, Yaru Ding, Yiming Qu, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications.

Zeping Weng, Zhangsheng Lan, Yaru Ding, Yiming Qu, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs.

Yiming Qu, Chu Yan, Yaru Ding, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Multimedia teaching resource allocation method for distance online education based on packet cluster mapping.

Yiming Qu, I-Hua Chen, Shangjie Meng

Int. J. Inf. Commun. Technol., 2023

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model.

Xinwei Yu, Chu Yan, Yaru Ding, Yiming Qu, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2023

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging States.

Yiming Qu, Chu Yan, Xinwei Yu, Yaru Ding, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Interval time dependent wake-up effect of HfZrO ferroelectric capacitor.

Yaru Ding, Xinwei Yu, Chu Yan, Zeping Weng, Yiming Qu, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Universal Hot Carrier Degradation Model under DC and AC Stresses.

Chu Yan, Yaru Ding, Yiming Qu, Liang Zhao, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric Films.

Yiming Qu, Yang Shen, Mingji Su, Jiwu Lu, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC Stress.

Yaru Ding, Wei Liu, Yiming Qu, Liang Zhao, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Nano-scaled transistor reliability characterization at nano-second regime.

Ran Cheng, Ying Sun, Yiming Qu, Wei Liu, Fanyu Liu, Jianfeng Gao, Nuo Xu, Bing Chen

Sci. China Inf. Sci., 2021

2020

In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation.

Yiming Qu, Jiwu Lu, Junkang Li, Zhuo Chen, Jie Zhang, Chunlong Li, Shiuh-Wuu Lee, Yi Zhao

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Juction Using a High Throughput Characterization System.

Shifan Gao, Bing Chen, Nuo Xu, Yiming Qu, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Sub-1 ns characterization methodology for transistor electrical parameter extraction.

Yiming Qu, Bing Chen, Wei Liu, Jinghui Han, Jiwu Lu, Yi Zhao

Microelectron. Reliab., 2018

Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs.

Yiming Qu, Ran Cheng, Wei Liu, Junkang Li, Bich-Yen Nguyen, Olivier Faynot, Nuo Xu, Bing Chen, Yi Zhao

Proceedings of the IEEE International Reliability Physics Symposium, 2018