Yimen Zhang

Orcid: 0000-0002-4887-735X

According to our database1, Yimen Zhang authored at least 21 papers between 2008 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
ATT-TA: A Cooperative Multiagent Deep Reinforcement Learning Approach for TSV Assignment in 3-D ICs.
IEEE Trans. Very Large Scale Integr. Syst., December, 2023

Thermal-Aware Fixed-Outline 3-D IC Floorplanning: An End-to-End Learning-Based Approach.
IEEE Trans. Very Large Scale Integr. Syst., December, 2023

A Novel Thermal-Aware Floorplanning and TSV Assignment With Game Theory for Fixed-Outline 3-D ICs.
IEEE Trans. Very Large Scale Integr. Syst., November, 2023

Analytical model and optimization strategy for SiC floating junction JBS diodes.
Microelectron. J., 2023

2022
Temperature-dependent DC and small signal performance of InGaAs/InP DHBT.
Microelectron. J., 2022

An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique.
Microelectron. J., 2022

2021
Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020
Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes.
IEEE Access, 2020

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics.
IEEE Access, 2020

2019
An Improved InP HEMT Small Signal Model with RC Network.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT.
J. Circuits Syst. Comput., 2018

A broadband high efficiency monolithic power amplifier with GaAs HBT.
IEICE Electron. Express, 2018

A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology.
IEICE Electron. Express, 2018

2017
Model of phonon contribution to nonionizing energy loss (NIEL) for InP/InGaAs heterojunction.
Microelectron. Reliab., 2017

Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs.
Microelectron. Reliab., 2017

2016
A <i>Ku</i>-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology.
J. Circuits Syst. Comput., 2016

2015
Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2012
The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors.
Microelectron. Reliab., 2012

2011
Characteristics of the intrinsic defects in unintentionally doped 4H-SiC after thermal annealing.
Microelectron. Reliab., 2011

2008
Power Grids Analysis in Compressed Krylov-Subspace Methods.
J. Circuits Syst. Comput., 2008

Improved empirical DC I-V model for 4H-SiC MESFETs.
Sci. China Ser. F Inf. Sci., 2008


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