Yih-Shan Yang

According to our database, Yih-Shan Yang authored at least 3 papers between 2011 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations.

Chun-Hsiung Hung, Meng-Fan Chang, Yih-Shan Yang, Yao-Jen Kuo, Tzu-Neng Lai, Shin-Jang Shen, Jo-Yu Hsu, Shuo-Nan Hung, Hang-Ting Lue, Yen-Hao Shih, Shih-Lin Huang, Ti-Wen Chen, Tzung Shen Chen, Chung Kuang Chen, Chi-Yu Hung, Chih-Yuan Lu

IEEE J. Solid State Circuits, 2015

2013

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes.

Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Frederick T. Chen, Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai

IEEE J. Solid State Circuits, 2013

2011

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability.

Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Peiyi Gu, Sumin Wang, Frederick T. Chen, Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai

Proceedings of the IEEE International Solid-State Circuits Conference, 2011