Yi-Chun Shih
Orcid: 0000-0003-1511-2366
According to our database1,
Yi-Chun Shih
authored at least 18 papers
between 2011 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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On csauthors.net:
Bibliography
2024
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10<sup>12</sup> Write Endurance and Integrated Margin-Expansion Schemes.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device.
IEEE J. Solid State Circuits, 2022
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2021
An 89TOPS/W and 16.3TOPS/mm<sup>2</sup> All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time.
IEEE J. Solid State Circuits, 2019
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination.
IEEE J. Solid State Circuits, 2019
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
2018
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2016
Enabling Wide Autonomous DVFS in a 22 nm Graphics Execution Core Using a Digitally Controlled Fully Integrated Voltage Regulator.
IEEE J. Solid State Circuits, 2016
2015
8.6 Enabling wide autonomous DVFS in a 22nm graphics execution core using a digitally controlled hybrid LDO/switched-capacitor VR with fast droop mitigation.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
5.7 A graphics execution core in 22nm CMOS featuring adaptive clocking, selective boosting and state-retentive sleep.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
IEEE Trans. Circuits Syst. II Express Briefs, 2013
2011
An Inductorless DC-DC Converter for Energy Harvesting With a 1.2-µW Bandgap-Referenced Output Controller.
IEEE Trans. Circuits Syst. II Express Briefs, 2011
IEEE J. Solid State Circuits, 2011