Yannick Rey-Tauriac

According to our database, Yannick Rey-Tauriac authored at least 7 papers between 2001 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2007

Degradation mechanism understanding of NLDEMOS SOI in RF applications.

D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac

Microelectron. Reliab., 2007

2005

Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology.

Yannick Rey-Tauriac, J. Badoc, B. Reynard, Raúl Andrés Bianchi, D. Lachenal, Alain Bravaix

Microelectron. Reliab., 2005

2003

Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology.

Yannick Rey-Tauriac, Olivier de Sagazan, M. Taurin, Olivier Bonnaud

Microelectron. Reliab., 2003

2002

Reliability improvement of high value doped polysilicon-based resistors.

E. Carvou, F. Le Bihan, Anne Claire Salaün, R. Rogel, Olivier Bonnaud, Yannick Rey-Tauriac, Xavier Gagnard, L. Roland

Microelectron. Reliab., 2002

2001

High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology.

Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud

Microelectron. Reliab., 2001

Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS.

Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud

Microelectron. Reliab., 2001

Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology.

Xavier Gagnard, Yannick Rey-Tauriac, Olivier Bonnaud

Microelectron. Reliab., 2001