Yannick Raffel

According to our database, Yannick Raffel authored at least 11 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility.

Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De

Adv. Intell. Syst., April, 2024

Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.

Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2024

FeFET based LIF Neuron with Learnable Threshold and Time Constant.

S. Pande, Masud Rana SK, Yannick Raffel, Maximilian Lederer, Konrad Seidel, A. Chakravorty, Sourav De, Bhaswar Chakrabarti

Proceedings of the Device Research Conference, 2024

2023

Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator.

Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe

Adv. Intell. Syst., June, 2023

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer

Proceedings of the IEEE International Memory Workshop, 2023

Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications.

Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications.

Sourav De, Maximilian Lederer, Yannick Raffel, Franz Müller, Konrad Seidel, Thomas Kämpfe

Proceedings of the 19th International SoC Design Conference, 2022

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.

Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination.

Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, Johannes Heitmann

Proceedings of the IEEE International Memory Workshop, 2022

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.

Yannick Raffel, Sunanda Thunder, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Luca Pirro, Sven Beyer, Talha Chohan, Po-Tsang Huang, Sourav De, Thomas Kämpfe, Konrad Seidel, Johannes Heitmann

Proceedings of the International Conference on IC Design and Technology, 2022

2021

Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices.

Luca Pirro, Aarthi Jayakumar, Olaf Zimmerhackl, Dieter Lipp, Ralf Illgen, Armin Muehlhoff, Ronny Pfuetzner, Alban Zaka, Michael Otto, Jan Hoentschel, Yannick Raffel, Konrad Seidel, Ricardo Olivo

Proceedings of the IEEE International Reliability Physics Symposium, 2021