Yang Huang

According to our database, Yang Huang authored at least 5 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology.

Junjun Zhang, Fanyu Liu, Bo Li, Yang Huang, Siyuan Chen, Yuchong Wang, Jiajun Luo, Jing Wan

Proceedings of the IEEE International Reliability Physics Symposium, 2022

The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology.

Xu Zhang, Fanyu Liu, Bo Li, Siyuan Chen, Yang Huang, Jiangjiang Li, Jian Jiao, Tianchun Ye, Jiajun Luo

Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022

2018

The total ionizing dose response of leading-edge FDSOI MOSFETs.

Jian Wang, Binhong Li, Yang Huang, Kai Zhao, Fang Yu, Qiwen Zheng, Qi Guo, Liewei Xu, J. Gao, X. Cai, Y. Cui

Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.

Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin

Microelectron. Reliab., 2018