Yachao Zhang

According to our database, Yachao Zhang authored at least 6 papers between 2020 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz.

Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao

Sci. China Inf. Sci., 2024

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability.

Kui Dang, Zhilin Qiu, Shudong Huo, Peng Zhan, Huining Liu, Yachao Zhang, Jing Ning, Hong Zhou, Jincheng Zhang

Sci. China Inf. Sci., 2024

2023

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.

Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao

Sci. China Inf. Sci., February, 2023

2020

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration.

Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao

IEEE Trans. Ind. Electron., 2020

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO_x/Al₂O₃ Gate Dielectrics.

Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao

IEEE Access, 2020

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.

Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao

IEEE Access, 2020