Y.-Y. Tseng

According to our database, Y.-Y. Tseng authored at least 2 papers between 2020 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM.

C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T. C. Chen, Min-Hung Lee

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2020

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory.

Kuan-Ting Chen, C. Lo, Y.-Y. Lin, C.-Y. Chueh, C. Chang, G.-Y. Siang, Y.-J. Tseng, Y.-J. Yang, F.-C. Hsieh, S.-H. Chang, H. Liang, S.-H. Chiang, J.-H. Liu, Y.-D. Lin, P.-C. Yeh, C.-Y. Wang, H.-Y. Yang, P.-J. Tzeng, M.-H. Liao, Shu-Tong Chang, Y.-Y. Tseng, Min-Hung Lee

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020