Y. Ji

According to our database, Y. Ji authored at least 3 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node.

S. Ko, J. H. Park, J. H. Bak, H. Jung, J. Shim, D. S. Kim, W. Lim, D.-E. Jeong, J. H. Lee, K. Lee, J.-H. Park, Y. Kim, C. Kim, J. H. Jeong, C. Y. Lee, S. H. Han, Y. Ji, S. H. Hwang, Hye Ji Shin, K. Lee, Y. J. Song, Yu-Gyun Shin, J. H. Song

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM.

Hideo Sato, H. M. Shin, H. Jung, S. W. Lee, H. Bae, H. Kwon, K. H. Ryu, W. C. Lim, Y. S. Han, J. H. Jeong, J. M. Lee, D. S. Kim, K. Lee, J. H. Lee, J. H. Park, Y. J. Song, Y. Ji, B. I. Seo, J. W. Kim, H. H. Kim

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019

Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology.

Y. Ji, H. J. Goo, J. Lim, S. B. Lee, S. Lee, Taiki Uemura, J. C. Park, S. I. Han, S. C. Shin, J. H. Lee, Y. J. Song, K. M. Lee, H. M. Shin, S. H. Hwang, B. Y. Seo, Y. K. Lee, J. C. Kim, Gwanhyeob Koh, K. C. Park, Sangwoo Pae, Gi-Tae Jeong, J. S. Yoon, E. S. Jung

Proceedings of the IEEE International Reliability Physics Symposium, 2019