Xuepeng Zhan
Orcid: 0000-0002-1701-9301
According to our database1,
Xuepeng Zhan
authored at least 18 papers
between 2020 and 2024.
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Bibliography
2024
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities.
CoRR, 2024
2023
Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing.
Sci. China Inf. Sci., December, 2023
High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., October, 2023
Microelectron. J., 2023
Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023
Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023
One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash.
Proceedings of the 15th IEEE International Conference on ASIC, 2023
Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications.
Proceedings of the 15th IEEE International Conference on ASIC, 2023
2022
Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022
Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator.
Microelectron. J., 2022
Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors.
Sci. China Inf. Sci., 2022
Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022
Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage.
Proceedings of the International Conference on Compilers, 2022
2021
Flash memory based computing-in-memory system to solve partial differential equations.
Sci. China Inf. Sci., 2021
Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021
2020
Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020