Xintian Zhou
Orcid: 0000-0001-9926-947X
According to our database1,
Xintian Zhou
authored at least 19 papers
between 2020 and 2023.
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Bibliography
2023
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023
2022
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022
Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022
2021
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021
2020
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020
Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020
Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020
The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020