Xiaowu Cai

According to our database, Xiaowu Cai authored at least 10 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC.

Yu Lu, Xiaowu Cai, Jian Lu, Longli Pan, Jianying Dang, Yafei Xie, Xupeng Wang, Bo Li

IEEE Trans. Very Large Scale Integr. Syst., November, 2024

A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs.

Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan, Yu Lu, Yafei Xie, Xupeng Wang, Shiping Wang, Bo Li

IEEE Trans. Circuits Syst. II Express Briefs, March, 2024

A precision current sensing circuit with chopper amplifier of symmetric topology.

Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li

Microelectron. J., 2024

A dual-mode buck converter with dynamic sawtooth voltage for wide input voltage range application.

Yafei Xie, Xiaowu Cai, Yu Lu, Longli Pan, Jian Lu, Lei Wang, Bo Li

IEICE Electron. Express, 2024

An integrated capacitor-less LDO with transient and stability enhancement.

Yafei Xie, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Mali Gao, Lei Wang, Bo Li

IEICE Electron. Express, 2024

2023

An on-chip integrated current sensor with high precision and large current range for smart power ICs.

Ruirui Xia, Xiaowu Cai, Liqiang Ding, Mali Gao, Yuexin Gao, Tian Han, Jianying Dang, Bo Li

Microelectron. J., April, 2023

Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio.

Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li

Microelectron. J., April, 2023

A high reliability under-voltage lock out circuit for power driver IC.

Liqiang Ding, Xiaowu Cai, Mali Gao, Ruirui Xia, Yuexin Gao

Integr., 2023

A wide input range, external capacitor-less LDO with fast transient response.

Mali Gao, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Ruirui Xia, Yuexin Gao

IEICE Electron. Express, 2023

2013

Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process.

Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv

Microelectron. Reliab., 2013