Xiaorong Luo
According to our database1,
Xiaorong Luo
authored at least 12 papers
between 2013 and 2024.
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Bibliography
2024
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode.
Microelectron. J., February, 2024
Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss.
Microelectron. J., 2024
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination.
Microelectron. J., 2024
2023
High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss.
Microelectron. J., 2023
2022
Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate.
Sci. China Inf. Sci., 2022
2021
TOC determination of Zhangjiatan shale of Yanchang formation, Ordos Basin, China, using support vector regression and well logs.
Earth Sci. Informatics, 2021
2019
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers.
Sci. China Inf. Sci., 2019
2018
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels.
Sci. China Inf. Sci., 2018
2017
Proceedings of the 12th IEEE International Conference on ASIC, 2017
2016
Sci. China Inf. Sci., 2016
2013
Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer.
J. Circuits Syst. Comput., 2013