Xiaohua Ma
Orcid: 0000-0002-1331-6253
According to our database1,
Xiaohua Ma
authored at least 34 papers
between 2003 and 2024.
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Bibliography
2024
Effect of <sup>60</sup>Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures.
Microelectron. J., February, 2024
Sci. China Inf. Sci., 2024
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure.
Sci. China Inf. Sci., 2024
Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate.
Sci. China Inf. Sci., 2024
A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness.
Sci. China Inf. Sci., 2024
2023
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.
Sci. China Inf. Sci., February, 2023
Proceedings of the IEEE International Conference on Integrated Circuits, 2023
A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology.
Proceedings of the 12th International Conference on Networks, Communication and Computing, 2023
2022
A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits.
IEEE Trans. Instrum. Meas., 2022
Galaxy Image Classification using Hierarchical Data Learning with Weighted Sampling and Label Smoothing.
CoRR, 2022
Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber.
CoRR, 2022
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.
Sci. China Inf. Sci., 2022
A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022
2021
An accurate Legendre collocation method for third-kind Volterra integro-differential equations with non-smooth solutions.
Numer. Algorithms, 2021
Recovery of high order accuracy in spectral collocation method for linear Volterra integral equations of the third-kind with non-smooth solutions.
J. Comput. Appl. Math., 2021
Sci. China Inf. Sci., 2021
Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021
2020
Rigorous convergence analysis of Jacobi spectral Galerkin methods for Volterra integral equations with noncompact kernels.
J. Comput. Appl. Math., 2020
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.
IEEE Access, 2020
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2018
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2016
IEICE Electron. Express, 2016
2015
Int. J. Wavelets Multiresolution Inf. Process., 2015
IEICE Electron. Express, 2015
IEICE Electron. Express, 2015
Convergence analysis of spectral collocation methods for a class of weakly singular Volterra integral equations.
Appl. Math. Comput., 2015
2014
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.
Microelectron. Reliab., 2014
Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp.
Sci. China Inf. Sci., 2014
2013
Mixed Boundary-Value Analysis of Rocking Vibrations of an Elastic Strip Foundation on Elastic Soil with Saturated Substrata.
J. Appl. Math., 2013
Numerical solution of fractional integro-differential equations by a hybrid collocation method.
Appl. Math. Comput., 2013
2005
Analysis of the Effect of LUT Size on FPGA Area and Delay Using Theoretical Derivations.
Proceedings of the 6th International Symposium on Quality of Electronic Design (ISQED 2005), 2005
Proceedings of the 6th International Symposium on Quality of Electronic Design (ISQED 2005), 2005
2003
IEEE Commun. Mag., 2003