Xiaodi Jin

Orcid: 0000-0002-7800-9000

According to our database1, Xiaodi Jin authored at least 7 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2024
On the Safe Operating Area of InP HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic Temperatures.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2022
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Thermal impedance of SiGe HBTs: Characterization and modeling.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2020
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation.
IEEE J. Solid State Circuits, 2020

Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020


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