Xiangshui Miao

Orcid: 0000-0002-5621-5495

According to our database1, Xiangshui Miao authored at least 34 papers between 2012 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Full-Analog Implementation of Activation Function Based on Phase-Change Memory for Artificial Neural Networks.
IEEE Trans. Ind. Electron., August, 2024

Logic-in-Memory Based on Majority Gates With Voltage-Gated SOT-MRAM Crossbar Arrays.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024

Detection of Biomolecules Using Solid-State Nanopores Fabricated by Controlled Dielectric Breakdown.
Sensors, April, 2024

In-Memory Wallace Tree Multipliers Based on Majority Gates Within Voltage-Gated SOT-MRAM Crossbar Arrays.
IEEE Trans. Very Large Scale Integr. Syst., March, 2024

A self-selecting memory element based on a method of interconnected ovonic threshold switching device.
Sci. China Inf. Sci., 2024

Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses.
Sci. China Inf. Sci., 2024

High Operation Speed(10ns/100ns) and Low Read Current (sub-1μA) 2D Floating Gate Transistor.
Proceedings of the IEEE International Memory Workshop, 2024

2023
Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing.
Sensors, October, 2023

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory.
Sci. China Inf. Sci., August, 2023

Two-dimensional materials-based integrated hardware.
Sci. China Inf. Sci., June, 2023

Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs.
Sci. China Inf. Sci., May, 2023

In-Memory Search for Highly Efficient Image Retrieval.
Adv. Intell. Syst., March, 2023

A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation.
Sci. China Inf. Sci., February, 2023

A memristive neural network based matrix equation solver with high versatility and high energy efficiency.
Sci. China Inf. Sci., February, 2023

Memristive Cosine-Similarity-Based Few-Shot Learning with Lifelong Memory Adaptation.
Adv. Intell. Syst., February, 2023

16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Heterogeneous Instruction Set Architecture for RRAM-enabled In-memory Computing.
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, 2023

Energy-Efficient ReRAM-Based High-Precision Discrete Fourier Transform for Image Reconstruction.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Invited Paper: A Memristor-Based Stateful Majority-Inverter Graph Logic and 1-Bit Full Adder for In-Memory Computing Systems.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

2022
2022 roadmap on neuromorphic devices and applications research in China.
Neuromorph. Comput. Eng., December, 2022

Adaptive Hodgkin-Huxley Neuron for Retina-Inspired Perception.
Adv. Intell. Syst., December, 2022

Complementary Memtransistor-Based Multilayer Neural Networks for Online Supervised Learning Through (Anti-)Spike-Timing-Dependent Plasticity.
IEEE Trans. Neural Networks Learn. Syst., 2022

Naive Bayes classifier based on memristor nonlinear conductance.
Microelectron. J., 2022

Low-time-complexity document clustering using memristive dot product engine.
Sci. China Inf. Sci., 2022

2021
Global Exponential Stability of Memristive Neural Networks With Mixed Time-Varying Delays.
IEEE Trans. Neural Networks Learn. Syst., 2021

Energy-Efficient Memristive Euclidean Distance Engine for Brain-Inspired Competitive Learning.
Adv. Intell. Syst., 2021

Large On/Off and Rectification Ratios, Self-Compliance, High-Uniformity in Pt/Al2O3/TaOx/Ta Self-Rectifying Memristors.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020
Recent Progress on Memristive Convolutional Neural Networks for Edge Intelligence.
Adv. Intell. Syst., 2020

A TCAD-based Study of NDR Effect in NC-FinFET.
Proceedings of the 2020 IEEE International Conference on Integrated Circuits, 2020

Electrostatic Characteristics Analysis of Ferroelectric Tunneling Junctions with Different Structures.
Proceedings of the 2020 IEEE International Conference on Integrated Circuits, 2020

Design for Enhancing the Performance of Memristive Convolution Neural Network.
Proceedings of the 2020 IEEE International Conference on Integrated Circuits, 2020

Analysis of Memristive Quantized Convolutional Neural Network Accelerator with Device Nonideality.
Proceedings of the 2020 IEEE International Conference on Integrated Circuits, 2020

2018
Memcomputing: fusion of memory and computing.
Sci. China Inf. Sci., 2018

2012
Numerical simulation of CZTS thin film solar cell.
Proceedings of the 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2012


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