Xia An

According to our database, Xia An authored at least 13 papers between 2009 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2024

Adaptive LDPC Decoder with Performance Prediction Based on Average Mutual Information.

Xia An, Chao Zhang, Kewu Peng, Zhitong He, Jian Song

Proceedings of the IEEE International Symposium on Broadband Multimedia Systems and Broadcasting, 2024

2023

Adaptive Quantized and Normalized MSA Based on Modified MET-DE and Its Application for 5G-NR LDPC Codes.

Xia An, Chao Zhang, Kewu Peng, Zhitong He, Jian Song

IEEE Access, 2023

Adaptive Quantized and Normalized MSA and Its Application for DTMB-A LDPC Codes.

Xia An, Chao Zhang, Kewu Peng, Zhitong He, Jian Song

Proceedings of the IEEE International Symposium on Broadband Multimedia Systems and Broadcasting, 2023

2022

Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence.

Jingyi Liu, Xia An, Gensong Li, Zhexuan Ren, Ming Li, Xing Zhang, Ru Huang

Sci. China Inf. Sci., 2022

2021

DyTAN: Dynamic Ternary Content Addressable Memory Using Nanoelectromechanical Relays.

Hongtao Zhong, Shengjie Cao, Li Jiang, Xia An, Vijaykrishnan Narayanan, Yongpan Liu, Huazhong Yang, Xueqing Li

IEEE Trans. Very Large Scale Integr. Syst., 2021

Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET.

Zhexuan Ren, Xia An, Gensong Li, Xing Zhang, Ru Huang

Sci. China Inf. Sci., 2021

2020

Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors.

Xiaoqiao Dong, Ming Li, Wanrong Zhang, Yuancheng Yang, Gong Chen, Shuang Sun, Jianing Wang, Xiaoyan Xu, Xia An

Sci. China Inf. Sci., 2020

2019

Low power and high uniformity of HfO x -based RRAM via tip-enhanced electric fields.

Xiaokang Li, Baotong Zhang, Bowen Wang, Xiaoyan Xu, Yuancheng Yang, Shuang Sun, Qifeng Cai, Shijie Hu, Xia An, Ming Li, Ru Huang

Sci. China Inf. Sci., 2019

2018

Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology.

Bingxin Zhang, Xia An, Pengqiang Liu, Xiangyang Hu, Ming Li, Xing Zhang, Ru Huang

Sci. China Inf. Sci., 2018

GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs.

Bingxin Zhang, Xia An, Xiangyang Hu, Ming Li, Xing Zhang, Ru Huang

Sci. China Inf. Sci., 2018

2017

Benchmarking TFET from a circuit level perspective: Applications and guideline.

Lingyi Guo, Le Ye, Cheng Chen, Qianqian Huang, Libo Yang, Zhu Lv, Xia An, Ru Huang

Proceedings of the IEEE International Symposium on Circuits and Systems, 2017

2015

Ge surface passivation by GeO2 fabricated by N2O plasma oxidation.

Meng Lin, Xia An, Ming Li, Quanxin Yun, Min Li, Zhiqiang Li, Pengqiang Liu, Xing Zhang, Ru Huang

Sci. China Inf. Sci., 2015

2009

Challenges of 22 nm and beyond CMOS technology.

Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang, Xing Zhang, Yangyuan Wang

Sci. China Ser. F Inf. Sci., 2009