Xavier Garros

According to our database, Xavier Garros authored at least 29 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications.

J. Luge-Alvarez, J. B. David, Alexandre Siligaris, Vincent Puyal, G. Moritz, Tadeu Mota Frutuoso, V. Lapras, Claire Fenouillet-Béranger, Laurent Brunet, P. Vincent, Didier Lattard, Xavier Garros, François Andrieu, Perrine Batude

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique.

A. Divay, Olivier Valorge, Christophe Dubarry, M. Medbouhi, R. Franiatte, D. Mermin, R. Velard, Y. Gobil, F. Morisot, Erwan Morvan, Ismael Charlet, Luca Lucci, J. Lugo, Xavier Garros

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications.

Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, Nada Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles.

A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Insight Into HCI Reliability on I/O Nitrided Devices.

C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2023

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.

S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration.

Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications.

Joycelyn Hai, Florian Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, Jeremie Forest, Vincent Knopik, Xavier Garros

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors.

Tadeu Mota Frutuoso, Xavier Garros, Jose Lugo-Alvarez, Roméo Kom Kammeugne, L. D. M. Zouknak, Abygaël Viey, W. van den Daele, Philippe Ferrari, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.

Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Frequency dependant gate oxide TDDB model.

M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.

Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration.

Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs.

Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.

A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.

Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold

Microelectron. Reliab., 2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2018

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.

M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.

Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.

Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Noise-induced dynamic variability in nano-scale CMOS SRAM cells.

Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.

Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes.

Carlos Navarro, Maryline Bawedin, François Andrieu, Jacques Cluzel, Xavier Garros, Sorin Cristoloveanu

Proceedings of the 44th European Solid State Device Research Conference, 2014

FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration.

Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, Fabrice Nemouchi, Mikaël Cassé, Xavier Garros, Lucie Tosti, Nils Rambal, Dominique Lafond, Hugo Dansas, Luca Pasini, Laurent Brunet, Fabien Deprat, Magali Grégoire, M. Mellier, Maud Vinet

Proceedings of the 44th European Solid State Device Research Conference, 2014

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.

Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu

Proceedings of the 44th European Solid State Device Research Conference, 2014

2009

Process dependence of BTI reliability in advanced HK MG stacks.

Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger

Microelectron. Reliab., 2009

2007

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.

Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin

Microelectron. Reliab., 2007

2001

Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications.

Nathalie Revil, Xavier Garros

Microelectron. Reliab., 2001