X. Y. Bao

According to our database, X. Y. Bao authored at least 4 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

P-type SnO Semiconductor Transistor and Application.

C. C. Wang, C. C. Kuo, C. H. Wu, A. Lu, H. Y. Lee, C. F. Hsu, P. J. Tzeng, T. Y. Lee, F. R. Hou, M. H. Chang, S. C. Lai, K. Goto, Shimeng Yu, C. I. Wu, C. T. Lin, Y. M. Lin, X. Y. Bao

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation.

P. C. Chang, P. J. Liao, C. H. Wu, Y. C. Chang, D. H. Hou, Elia Ambrosi, H. Y. Lee, J. H. Lee, X. Y. Bao

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors.

S. Vaziri, I. M. Datye, Elia Ambrosi, Asir Intisar Khan, H. Kwon, C. H. Wu, C. F. Hsu, J. Guy, T. Y. Lee, H.-S. Philip Wong, X. Y. Bao

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array.

M. Y. Song, C. M. Lee, S. Y. Yang, G. L. Chen, K. M. Chen, I J. Wang, Y. C. Hsin, K. T. Chang, C. F. Hsu, S. H. Li, J. H. Wei, T. Y. Lee, M. F. Chang, X. Y. Bao, C. H. Diaz, S. J. Lin

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022