X. L. Han

According to our database, X. L. Han authored at least 2 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2024

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT.

S. H. Meng, X. L. Han, P. Ding, B. Mei, Y. B. Su, J. L. Zhang, H. Q. Yun, Z. Jin, Yinghui Zhong

Microelectron. J., 2024

2015

Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array.

Guilhem Larrieu, Y. Guerfi, X. L. Han, N. Clement

Proceedings of the 45th European Solid State Device Research Conference, 2015