X. Federspiel
According to our database1,
X. Federspiel
authored at least 41 papers
between 2006 and 2024.
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On csauthors.net:
Bibliography
2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the 25th IEEE International Symposium on On-Line Testing and Robust System Design, 2019
2018
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges.
Microelectron. Reliab., 2018
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.
Microelectron. Reliab., 2018
AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
A new method for quickly evaluating reversible and permanent components of the BTI degradation.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the 24th IEEE International Symposium on On-Line Testing And Robust System Design, 2018
2017
Microelectron. Reliab., 2017
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2016
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.
Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016
2015
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015
2012
Microscopic scale characterization and modeling of transistor degradation under HC stress.
Microelectron. Reliab., 2012
2007
FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding.
Microelectron. Reliab., 2007
2006
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development.
Microelectron. Reliab., 2006