X. Federspiel

According to our database, X. Federspiel authored at least 41 papers between 2006 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Non-conducting Hot carrier temperature activation and temperature sense effect.

X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2024

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles.

A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS.

Florian Cacho, P. Cathelin, Joycelyn Hai, S. Bouvot, Jean-Francois Jozef Nowakowski, M. Martinez, R. Debroucke, S. Jean, R. Paulin, J. Antonijevic, X. Federspiel, Nicolas Planes, Giuseppe Papotto, Alessandro Parisi, Alessandro Finocchiaro, Andrea Cavarra, Alessandro Castorina, Claudio Nocera, Giuseppe Palmisano

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Characterization and modeling of DCR and DCR drift variability in SPADs.

Mathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy, Françis Calmon

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation.

Joycelyn Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Effect of Frequency on Reliability Of High-K MIM Capacitors.

X. Federspiel, A. Griffon, M. Barlas, P. Lamontagne

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Insight Into HCI Reliability on I/O Nitrided Devices.

C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes.

Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Frequency dependant gate oxide TDDB model.

M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.

Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling.

Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2021

HCI Temperature sense effect from 180nm to 28nm nodes.

Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Monitoring Setup and Hold Timing Limits.

Florian Cacho, Lorena Anghel, Xavier Federspiel

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Comparison of variability of HCI induced drift for SiON and HKMG devices.

Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS.

Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.

A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Process Optimization for HCI Improvement in I/O Analog Devices.

Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement.

Florian Cacho, X. Federspiel, D. Nouguier, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Global and Local Process Variation Simulations in Design for Reliability approach.

Audrey Michard, Florian Cacho, Damien Celeste, Xavier Federspiel

Proceedings of the 25th IEEE International Symposium on On-Line Testing and Robust System Design, 2019

2018

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges.

D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy

Microelectron. Reliab., 2018

Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.

Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold

Microelectron. Reliab., 2018

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.

M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Key parameters driving transistor degradation in advanced strained SiGe channels.

Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.

Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Modeling self-heating effects in advanced CMOS nodes.

M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Integrated Test Structures for Reliability Investigation under Dynamic Stimuli.

Florian Cacho, D. Nouguier, M. Arabi, X. Federspiel, Y. Carminati, M. Saliva

Proceedings of the 24th IEEE International Symposium on On-Line Testing And Robust System Design, 2018

2017

Characterization of Low Drop-Out during ageing and design for yield.

R. Lajmi, Florian Cacho, Estelle Lauga-Larroze, Sylvain Bourdel, Ph. Benech, Vincent Huard, X. Federspiel

Microelectron. Reliab., 2017

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration.

Claire Fenouillet-Béranger, S. Beaurepaire, Fabien Deprat, Alexandre Ayres De Sousa, Laurent Brunet, Perrine Batude, Olivier Rozeau, François Andrieu, Paul Besombes, M.-P. Samson, Bernard Previtali, F. Nemouchi, G. Rodriguez, Philippe Rodriguez, R. Famulok, Nils Rambal, Viorel Balan, Z. Saghi, V. Jousseaume, Charles-Antoine Guérin, F. Ibars, F. Proud, D. Nouguier, David Ney, V. Delaye, H. Dansas, X. Federspiel, Maud Vinet

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes.

Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix

Microelectron. Reliab., 2016

Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes.

Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard

Microelectron. Reliab., 2016

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.

Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard

Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

2015

28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation.

P. Mora, X. Federspiel, Florian Cacho, Vincent Huard, Wafa Arfaoui

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.

A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.

Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.

A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI.

M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel

Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015

2012

Microscopic scale characterization and modeling of transistor degradation under HC stress.

Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix

Microelectron. Reliab., 2012

2007

FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding.

S. Orain, J.-C. Barbé, X. Federspiel, P. Legallo, H. Jaouen

Microelectron. Reliab., 2007

2006

Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development.

S. Courtas, M. Grégoire, X. Federspiel, N. Bicaïs-Lépinay, C. Wyon

Microelectron. Reliab., 2006