Wolfgang Gustin

According to our database, Wolfgang Gustin authored at least 13 papers between 2005 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.

Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.

Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.

Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.

Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger

Microelectron. Reliab., 2018

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.

Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.

Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

Degradation and recovery of variability due to BTI.

Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger

Microelectron. Reliab., 2016

2014

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.

Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser

Microelectron. Reliab., 2014

HCS degradation of 5 nm oxide high-voltage PLDMOS.

C. Olk, Stefano Aresu, R. Rudolf, M. Röhner, Wolfgang Gustin, E. Stein Von Kamienski

Microelectron. Reliab., 2014

2012

New insights on the PBTI phenomena in SiON pMOSFETs.

Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser

Microelectron. Reliab., 2012

2008

New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure.

Michael Goroll, Reinhard Pufall, Stefano Aresu, Wolfgang Gustin

Microelectron. Reliab., 2008

NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique.

Stefano Aresu, Reinhard Pufall, Michael Goroll, Wolfgang Gustin

Microelectron. Reliab., 2008

2005

Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits.

Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes

Microelectron. Reliab., 2005