William Vandendaele

According to our database, William Vandendaele authored at least 10 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications.

Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, Etienne Nowak, Aurore Constant, Ferdinando Iucolano

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs.

Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Study of forward AC stress degradation of GaN-on-Si Schottky diodes.

Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard

Microelectron. Reliab., 2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes.

William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold

Proceedings of the 47th European Solid-State Device Research Conference, 2017