Werner Simbürger

According to our database, Werner Simbürger authored at least 22 papers between 1992 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS.

Vadim Issakov, Sebastian Kehl-Waas, Radu Ciocoveanu, Werner Simbürger, Angelika Geiselbrechtinger

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2016

Transient voltage suppressors - technologies and characteristics.

Werner Simbürger, Joost A. Willemen, Vadim Vendt, Thomas Schwingshackl, Antoine D'Arbonneau

Elektrotech. Informationstechnik, 2016

2015

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique.

Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany

Microelectron. Reliab., 2015

2011

On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP).

Martin Sauter, Werner Simbürger, David Johnsson, Matthias Stecher

Microelectron. Reliab., 2011

2010

System ESD robustness by co-design of on-chip and on-board protection measures.

Harald Gossner, Werner Simbürger, Matthias Stecher

Microelectron. Reliab., 2010

2009

Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS.

Vadim Issakov, Domagoj Siprak, Marc Tiebout, Andreas Thiede, Werner Simbürger, Linus Maurer

IET Circuits Devices Syst., 2009

Merged power amplifier and mixer circuit topology for radar applications in CMOS.

Vadim Issakov, Marc Tiebout, Herbert Knapp, Yiqun Cao, Werner Simbürger

Proceedings of the 35th European Solid-State Circuits Conference, 2009

Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology.

Vadim Issakov, Herbert Knapp, Filippo Magrini, Andreas Thiede, Werner Simbürger, Linus Maurer

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2007

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology.

Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz

IEEE J. Solid State Circuits, 2007

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar.

Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS Technology.

Marcin K. Augustyniak, W. Weber, Gottfried Beer, Hans Mulatz, L. Elbrecht, H.-J. Timme, Marc Tiebout, Werner Simbürger, Christian Paulus, Björn Eversmann, Doris Schmitt-Landsiedel, Roland Thewes, Ralf Brederlow

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology.

Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2004

Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology.

Werner Perndl, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Werner Simbürger, Arpad L. Scholtz

IEEE J. Solid State Circuits, 2004

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-Ω output.

Winfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz

IEEE J. Solid State Circuits, 2004

A low-power low-voltage NMOS bulk-mixer with 20 GHz bandwidth in 90 nm CMOS.

Christoph Kienmayer, Marc Tiebout, Werner Simbürger, Arpad L. Scholtz

Proceedings of the 2004 International Symposium on Circuits and Systems, 2004

2003

A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output.

Winfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz

Proceedings of the ESSCIRC 2003, 2003

2002

A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz f_T Si-bipolar.

Winfried Bakalski, Werner Simbürger, Daniel Kehrer, Hans-Dieter Wohlmuth, Mirjana Rest, Arpad L. Scholtz

Proceedings of the 2002 International Symposium on Circuits and Systems, 2002

2001

A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz.

Hans-Dieter Wohlmuth, Werner Simbürger

IEEE J. Solid State Circuits, 2001

Modeling of monolithic lumped planar transformers up to 20 GHz.

Daniel Kehrer, Werner Simbürger, Hans-Dieter Wohlmuth, Arpad L. Scholtz

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

1999

A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz.

Werner Simbürger, Hans-Dieter Wohlmuth, Peter Weger, Alexander Heinz

IEEE J. Solid State Circuits, 1999

1994

Personal communications transceiver architectures for monolithic integration.

Ernst Bonek, Gerhard Schultes, Peter Kreuzgruber, Werner Simbürger, Peter Weger, T. C. Leslie, J. Popp, Herbert Knapp, N. Rohringer

Proceedings of the 5th IEEE International Symposium on Personal, 1994

1992

A testbed for DECT physical- and medium access-layer.

Gerhard Schultes, Arpad L. Scholtz, Martin Happel, Werner Simbürger

Proceedings of the Third IEEE International Symposium on Personal, 1992