Wensuo Chen

According to our database, Wensuo Chen authored at least 9 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Comprehensive experimental study on Schottky contact super barrier rectifier.

Qisheng Yu, Zhengyuan Zhang, Aohang Zhang, Jiaweiwen Huang, Wensuo Chen

Microelectron. J., February, 2024

Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar.

Zhigang Shen, Wensuo Chen

Microelectron. J., February, 2024

A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier.

Peijian Zhang, Kunfeng Zhu, Wensuo Chen

IEICE Trans. Electron., January, 2024

Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position.

Yuying Wang, Zhengyuan Zhang, Peng Jian, Pengfei Liao, Aohang Zhang, Kunfeng Zhu, Wensuo Chen

Microelectron. J., 2024

A transient-enhanced output-capacitorless LDO regulator with non-inverting pull-push gain stage.

Hang Shu, Pengfei Liao, Haiqing Peng, Wensuo Chen

Microelectron. J., 2024

Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top.

Zhigang Shen, Pengfei Liao, Qisheng Yu, Jiaweiwen Huang, Aohang Zhang, Wensuo Chen

Microelectron. J., 2024

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance.

Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li

Microelectron. J., 2024

2022

A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels.

Yuying Wang, Aohang Zhang, Peng Jian, Wensuo Chen

IEICE Electron. Express, 2022

2017

A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels.

Peijian Zhang, Xue Wu, Qianning Yi, Wensuo Chen, Yonghui Yang, Kunfeng Zhu, Kaizhou Tan, Yi Zhong

Microelectron. Reliab., 2017