Wenshen Li
According to our database1,
Wenshen Li
authored at least 7 papers
between 2018 and 2022.
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2022
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Bibliography
2022
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range.
Proceedings of the Device Research Conference, 2022
2020
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts.
Proceedings of the 2020 Device Research Conference, 2020
2019
Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm<sup>2</sup>.
Proceedings of the Device Research Conference, 2019
Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.
Proceedings of the Device Research Conference, 2019
2018
Microelectron. Reliab., 2018
Proceedings of the 76th Device Research Conference, 2018