Wenqiang Ba

According to our database1, Wenqiang Ba authored at least 2 papers in 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2019
A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism.
Microelectron. J., 2019

A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs.
Proceedings of the 16th International Conference on Synthesis, 2019


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