Wenqiang Ba

According to our database, Wenqiang Ba authored at least 2 papers in 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism.

Linan Li, Wenqiang Ba, Wei Wang, Ling Li, Guangwei Xu, Lingfei Wang, Zhuoyu Ji, Congyan Lu, Writam Banerjee

Microelectron. J., 2019

A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs.

Feng Zhang, Linan Li, Qiang Huo, Cong Fang, Wenqiang Ba

Proceedings of the 16th International Conference on Synthesis, 2019