Wenkun Shi

According to our database, Wenkun Shi authored at least 2 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.

Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

2021

A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.

Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi

Proceedings of the 14th IEEE International Conference on ASIC, 2021