Wen Liu
Affiliations:- Xi'an Jiaotong-Liverpool University, Department of Electrical and Electronic Engineering, Suzhou, China
According to our database1,
Wen Liu
authored at least 16 papers
between 2019 and 2023.
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Bibliography
2023
Proceedings of the International Conference on IC Design and Technology, 2023
The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs.
Proceedings of the International Conference on IC Design and Technology, 2023
Proceedings of the International Conference on IC Design and Technology, 2023
The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation.
Proceedings of the International Conference on IC Design and Technology, 2023
2022
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer.
Proceedings of the International Conference on IC Design and Technology, 2022
2021
Proceedings of the International Conference on IC Design and Technology, 2021
Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric.
Proceedings of the International Conference on IC Design and Technology, 2021
Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests.
Proceedings of the 14th IEEE International Conference on ASIC, 2021
2020
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.
IEEE Access, 2020
2019
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters.
IEEE Access, 2019
Proceedings of the International Conference on IC Design and Technology, 2019
Proceedings of the International Conference on IC Design and Technology, 2019
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.
Proceedings of the International Conference on IC Design and Technology, 2019
Design of GaN-based Voltage Reference Circuit for a Wide-Temperature-Range Operation.
Proceedings of the International Conference on IC Design and Technology, 2019
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.
Proceedings of the International Conference on IC Design and Technology, 2019
Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode.
Proceedings of the International Conference on IC Design and Technology, 2019