Weizhuo Gan

According to our database, Weizhuo Gan authored at least 4 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.

Peng Zhao, Lei Cao, Fan Zhang, Haoqing Xu, Weizhuo Gan, Qingzhu Zhang, Zhaohao Zhang, Jiaxin Yao, Guoliang Tian, Kun Luo, Zhenhua Wu, Huaxiang Yin

Microelectron. J., November, 2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

2022

Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks.

Haoqing Xu, Weizhuo Gan, Lei Cao, Huaxiang Yin, Zhenhua Wu

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2021