Weijie Wei

Orcid: 0000-0002-4261-2377

Affiliations:
  • Hangzhou Dianzi University, School of Microelectronics, Hangzhou, China


According to our database1, Weijie Wei authored at least 3 papers between 2023 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

2023
2024
0
1
2
3
1
1
1

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2024
A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications.
Microelectron. J., 2024

2023
Optimization of negative capacitance junctionless gate-all-around field-effect transistor using asymmetric non-local lateral Gaussian doping.
Microelectron. J., 2023

Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution.
Proceedings of the Electronics, Communications and Networks, 2023


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