Weidong Zhang

Orcid: 0000-0003-4600-7382

Affiliations:

Liverpool John Moores University, UK

According to our database¹, Weidong Zhang authored at least 19 papers between 2014 and 2023.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of three.

Timeline

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Bibliography

2023

A Pragmatic Model to Predict Future Device Aging.

[BibT_eX]

[DOI]

IEEE Access, 2023

Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps.

[BibT_eX]

[DOI]

Proceedings of the 15th IEEE International Conference on ASIC, 2023

Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices.

[BibT_eX]

[DOI]

Zheng Chai

Weidong Zhang

Jian Fu Zhang

Proceedings of the 15th IEEE International Conference on ASIC, 2023

2022

Synaptic 1/f noise injection for overfitting suppression in hardware neural networks.

[BibT_eX]

[DOI]

Neuromorph. Comput. Eng., 2022

2021

On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude.

[BibT_eX]

[DOI]

IEEE Access, 2021

An integrated method for extracting the statistical distribution of RTN time constants.

[BibT_eX]

[DOI]

Proceedings of the 14th IEEE International Conference on ASIC, 2021

True random number generator based on switching probability of volatile GeXSe1-X ovonic threshold switching selectors.

[BibT_eX]

[DOI]

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020

An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants.

[BibT_eX]

[DOI]

IEEE Access, 2020

2019

Committee Machines - A Universal Method to Deal with Non-Idealities in RRAM-Based Neural Networks.

[BibT_eX]

[DOI]

CoRR, 2019

Voltage step stress: a technique for reducing test time of device ageing.

[BibT_eX]

[DOI]

Proceedings of the International Conference on IC Design and Technology, 2019

An assessment of RTN-induced threshold voltage jitter.

[BibT_eX]

[DOI]

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018

As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction.

[BibT_eX]

[DOI]

Jianfu Zhang

Zhigang Ji

Wei Dong Zhang

Microelectron. Reliab., 2018

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs.

[BibT_eX]

[DOI]

IEEE Access, 2018

2017

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures.

[BibT_eX]

[DOI]

IEEE Access, 2017

Hot carrier aging of nano-scale devices: Characterization method, statistical variation, and their impact on use voltage.

[BibT_eX]

[DOI]

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015

ESD characterization of planar InGaAs devices.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

NBTI prediction and its induced time dependent variation.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Energy distribution of positive charges in high-k dielectric.

[BibT_eX]

[DOI]

Sharifah Wan Muhamad Hatta

Microelectron. Reliab., 2014

Weidong Zhang

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