Wei Xu

According to our database, Wei Xu authored at least 13 papers between 2008 and 2013.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2013

Exploring the Use of Emerging Nonvolatile Memory Technologies in Future FPGAs.

Yangyang Pan, Yiran Li, Hongbin Sun, Wei Xu, Nanning Zheng, Tong Zhang

IEEE Trans. Very Large Scale Integr. Syst., 2013

Using Multilevel Phase Change Memory to Build Data Storage: A Time-Aware System Design Perspective.

Qi Wu, Fei Sun, Wei Xu, Tong Zhang

IEEE Trans. Computers, 2013

2012

Using Magnetic RAM to Build Low-Power and Soft Error-Resilient L1 Cache.

Hongbin Sun, Chuanyin Liu, Wei Xu, Jizhong Zhao, Nanning Zheng, Tong Zhang

IEEE Trans. Very Large Scale Integr. Syst., 2012

A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme.

Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang

IEEE J. Solid State Circuits, 2012

2011

A Time-Aware Fault Tolerance Scheme to Improve Reliability of Multilevel Phase-Change Memory in the Presence of Significant Resistance Drift.

Wei Xu, Tong Zhang

IEEE Trans. Very Large Scale Integr. Syst., 2011

Design of Last-Level On-Chip Cache Using Spin-Torque Transfer RAM (STT RAM).

Wei Xu, Hongbin Sun, Xiaobin Wang, Yiran Chen, Tong Zhang

IEEE Trans. Very Large Scale Integr. Syst., 2011

2010

Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search Speed.

Wei Xu, Tong Zhang, Yiran Chen

IEEE Trans. Very Large Scale Integr. Syst., 2010

Using time-aware memory sensing to address resistance drift issue in multi-level phase change memory.

Wei Xu, Tong Zhang

Proceedings of the 11th International Symposium on Quality of Electronic Design (ISQED 2010), 2010

Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM.

Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang

Proceedings of the 2010 International Symposium on Low Power Electronics and Design, 2010

A nondestructive self-reference scheme for Spin-Transfer Torque Random Access Memory (STT-RAM).

Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang

Proceedings of the Design, Automation and Test in Europe, 2010

2009

Data manipulation techniques to reduce phase change memory write energy.

Wei Xu, Jibang Liu, Tong Zhang

Proceedings of the 2009 International Symposium on Low Power Electronics and Design, 2009

Improving STT MRAM storage density through smaller-than-worst-case transistor sizing.

Wei Xu, Yiran Chen, Xiaobin Wang, Tong Zhang

Proceedings of the 46th Design Automation Conference, 2009

2008

Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin.

Wei Xu, Tong Zhang, Yiran Chen

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2008), 2008