Wataru Saito

According to our database, Wataru Saito authored at least 17 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN).

Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shinichi Nishizawa, Wataru Saito

IEEE Access, 2024

2023

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control.

Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shinichi Nishizawa, Wataru Saito

IEEE Access, 2023

A Low Noise 8Mpixel CMOS Image Sensor with 5.36GHz Global Counter and Dual Latch Skew Canceler for Surveillance AI Camera System.

Yoichi Iizuka, Akihide Maezono, Wataru Saito, Atsushi Yamane, Kazuhiko Takami, Fukashi Morishita

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023

2022

A 30.2-µ Vrms Horizontal Streak Noise 8.3-Mpixel 60-Frames/s CMOS Image Sensor With Skew-Relaxation ADC and On-Chip Testable Ramp Generator for Surveillance Camera.

Fukashi Morishita, Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Masao Ito

IEEE J. Solid State Circuits, 2022

High Accuracy Test Techniques with Fine Pattern Generator and Ramp Test Circuit for CMOS Image Sensor.

Fukashi Morishita, Wataru Saito, Norihito Kato, Yoichi Iizuka, Masao Ito

IEICE Trans. Electron., 2022

GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery.

Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses.

Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A Low Noise and Linearity Improvement CMOS Image Sensor for Surveillance Camera with Skew-Relaxation Local Multiply Circuit and On-Chip Testable Ramp Generator.

Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Fukashi Morishita

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021

2020

An ADC Test Technique With Dual-Path/Multi-Functional Fine Pattern Generator Realizing High Accuracy Measurement for CMOS Image Sensor.

Fukashi Morishita, Masanori Otsuka, Wataru Saito

Proceedings of the 29th IEEE Asian Test Symposium, 2020

2019

Switching of 3300V Scaled IGBT by 5V Gate Drive.

Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs.

Wataru Saito, Toshiyuki Naka

Microelectron. Reliab., 2017

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications.

Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch

IEICE Trans. Electron., 2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

UIS test of high-voltage GaN-HEMTs with p-type gate structure.

Wataru Saito, Toshiyuki Naka

Microelectron. Reliab., 2016

2015

Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications.

Li Zhang, Mitsuo Koike, Mizuki Ono, Shogo Itai, Kazuya Matsuzawa, Syotaro Ono, Wataru Saito, Masakazu Yamaguchi, Yohei Hayase, Keiryo Hara

Microelectron. Reliab., 2015

Destruction failure analysis and international reliability test standard for power devices.

Takashi Setoya, Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo

Microelectron. Reliab., 2015

Breakdown behaviour of high-voltage GaN-HEMTs.

Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi

Microelectron. Reliab., 2015