Wataru Mizubayashi

According to our database, Wataru Mizubayashi authored at least 9 papers between 2005 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Analysis of charge-to-hot-carrier degradation in Ge pFinFETs.

Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2015

PBTI for N-type tunnel FinFETs.

Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.

Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes.

Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks.

Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2005

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics.

Wataru Mizubayashi, Naoki Yasuda, Kenji Okada, Hiroyuki Ota, Hirokazu Hisamatsu, Kunihiko Iwamoto, Koji Tominaga, Katsuhiko Yamamoto, Tsuyoshi Horikawa, Toshihide Nabatame

Microelectron. Reliab., 2005

Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation.

Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki

IEICE Trans. Electron., 2005