Wardhana A. Sasangka

According to our database, Wardhana A. Sasangka authored at least 5 papers between 2015 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.

Wardhana A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson

Microelectron. Reliab., 2018

2017

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.

Wardhana A. Sasangka, Govindo J. Syaranamual, Y. Gao, Riko I. Made, Chee Lip Gan, Carl V. Thompson

Microelectron. Reliab., 2017

Characterisation of defects generated during constant current InGaN-on-silicon LED operation.

Riko I. Made, Yu Gao, Govindo J. Syaranamual, Wardhana A. Sasangka, L. Zhang, Xuan Sang Nguyen, Y. Y. Tay, Jason Scott Herrin, Carl V. Thompson, Chee Lip Gan

Microelectron. Reliab., 2017

2016

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation.

Govindo J. Syaranamual, Wardhana A. Sasangka, Riko I. Made, Subramaniam Arulkumaran, Geok Ing Ng, Siew Chuen Foo, Chee Lip Gan, Carl V. Thompson

Microelectron. Reliab., 2016

2015

Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing.

Wardhana A. Sasangka, Govindo J. Syaranamual, Chee Lip Gan, Carl V. Thompson

Proceedings of the IEEE International Reliability Physics Symposium, 2015